Method of fabricating multiwavelength infrared focal plane array detector

ABSTRACT

A multiwavelength local plane array infrared detector is included on a common substrate having formed on its top face a plurality of In x  Ga 1-x  As (x≦0.53) absorption layers, between each pair of which a plurality of InAs y  P 1-y  (y≦1) buffer layers are formed having substantially increasing lattice parameters, respectively, relative to said substrate, for preventing lattice mismatch dislocations from propagating through successive ones of the absorption layers of decreasing bandgap relative to said substrate, whereby a plurality of detectors for detecting different wavelengths of light for a given pixel are provided by removing material above given areas of successive ones of the absorption layers, which areas are doped to form a pn junction with the surrounding unexposed portions of associated absorption layers, respectively, with metal contacts being formed on a portion of each of the exposed areas, and on the bottom of the substrate for facilitating electrical connections thereto.

GOVERNMENT RIGHTS

This invention was made with Government support under Contract No.N00014-93-1-0223P00001, awarded by the Office of Naval Research,Department of Defense, and NASA Jet Propulsion Laboratory, undercontract No. NAS7-1304. The Government has certain rights in thisinvention.

This is a divisional application of U.S. Ser. No. 08/278,617 filed onJul. 21, 1994.

FIELD OF THE INVENTION

The present invention relates generally to infrared detectors, and moreparticularly to detectors for detecting light in the infrared ofdifferent wavelengths.

BACKGROUND OF THE INVENTION

Applications involving fiber optic communications systems typicallyutilize light waves having wavelengths in the near infrared (0.8 to 3.0micrometers in wavelength). These systems presently represent thegreatest usage for near infrared detectors. However, other applicationssuch as temperature sensing, night vision, eye-safe range finding,process control, lidar, and wind-shear detection require detectors withhigher sensitivity and faster response times in the near IR region.Recently, InGaAs detectors have been investigated for light detection atwavelengths greater than 1.65 μm because of their potential for highperformance and reliability. Such detectors have demonstrated highquantum efficiencies (>70%), low dark current (<100 mA cm² at -5 V), andrise times less than one nanosecond at room temperature. Other materials(Ge, PbS, InSb, PtSi, HgCdTe, etc.) have been used for detectors atwavelengths greater than 2 μm, but they generally have to be cooled tolow temperatures, often have very slow response, or have high darkcurrents.

Since In₀.53 Ga₀.47 As detects light at wavelengths =1.65 μm, in orderto detect longer wavelengths more indium must be added to the ternarycompound, thereby decreasing the bandgap. In this case, the latticeparameter can no longer match that of the InP substrates. A graded layertechnique has been developed to accommodate the lattice mismatch betweenthe substrate (a_(o) =5.869 Å) and the In_(x) Ga_(1-x) As (x >0.53)absorption layer (a_(o) >5.869 Å). In this technique, InAs_(y) P_(1-y)(y≦1) buffer layers with increasing lattice parameters are grown inbetween the InP substrate and the absorption layer. This preventslattice mismatch dislocations from propagating from layer to layer,enabling the growth of absorption layers with good optoelectronicproperties. It is also possible to use In_(x) Ga_(1-x) As as gradinglayers by increasing the indium concentration. However, by using InAsPwhich has a larger bandgap than In_(x) Ga_(1-x) As, better spectralresponse is obtained for back illumination (light enters through thesubstrate). Also, using larger bandgap materials as buffer layersresults in detectors with lower dark current. InGaAs detectors with upto 2.6 μm cutoff wavelength using InAsP graded layers have beensuccessfully fabricated with good opto-electronic properties.

SUMMARY OF THE INVENTION

In one embodiment of the invention, an infrared detector is provided ina plural wavelength InGaAs focal plane array pixel element for detectinga plurality of wavelengths of light over a predetermined range in theinfrared or near infrared, where each of the wavelength sensitivedetectors are formed on a common substrate, and are individuallyaddressable. The detector consists of successively smaller bandgaplayers of In_(x) Ga_(1-x) As (x≧0.53) formed over a substrate, separatedby compositionally graded layers of InAs_(y) P_(1-y) (y≦1) to decreasedefects induced by lattice mismatch strain with the InP substrate.Portions of the various layers are selectively removed to form differentpn junctions with different wavelength responses, respectively

BRIEF DESCRIPTION OF THE DRAWINGS

Various embodiments of the present invention are described below withreference to the drawings, in which like items are identified by thesame reference designation, and in which:

FIG. 1A is a cross sectional view of an engineering prototype for athree wavelength infrared detector in one embodiment of the invention;

FIG. 1B is a pictorial and chart-like diagram showing for each layer ofthe device of FIG. 1A, the composition, bandgap, and thickness thereof,respectively;

FIG. 1C is a band diagram positioned in alignment with the correspondinglayers of the device of FIG. 1B, for showing the relative bandgaps ofeach layer compared to the other, respectively;

FIG. 1D shows the bottom of the detector of FIG. 1A, for a preferredembodiment thereof including an antireflective coating and ohmic contactgrid thereon;

FIG. 2 shows a plot of the measured dark current of each one of thethree detectors of the device of FIG. 1A under various conditions ofreverse bias voltage;

FIG. 3 shows a plot of quantum efficiency versus wavelength for each oneof the three detector regions of the device of FIG. 1A;

FIG. 4 is a top view of a portion of the device of FIG. 1A, showingthree detector regions;

FIG. 5A shows a simplified cross section of the epitaxial structure ofan ideal device for another embodiment of the invention;

FIG. 5B shows a band diagram illustrating the band gaps for each one ofthe corresponding layers of the device of FIG. 5A; and

FIG. 6 shows a cross section of the epitaxial structure of an N-colordevice of another embodiment of the invention in association with acorresponding band diagram for showing the band gaps of each of thelayers.

DETAILED DESCRIPTION OF THE INVENTION

In FIG. 1A, a prototype detector array pixel sensitive to threedifferent selectable infrared wavelengths is shown, for one embodimentof the invention as developed for use as a focal plane array imagingdevice for applications such as gas spectroscopy and absolutetemperature measurements (pyrometry). Since detectors with smallerbandgap which detect longer wavelength also have larger dark current,one can use this pixel to select the detector with the appropriateabsorption layer to maximize the quantum efficiency while minimizing thedark current. The device 1 includes a plurality of integrated detectorpixels, each including regions 3, 5, and 7 for detecting differentwavelengths of light, respectively. In this example, the light is on thenear infrared or infrared wavelength regions. Optical absorption occurs,with reference to FIG. 1B, in 3 μm thick In₀.53 Ga₀.47 As, In₀.7 Ga₀.3As, and In₀.85 Ga₀.15 As layers 9, 11, 13, respectively, which are grownby vapor phase epitaxy on top of an InP substrate 15, InAs₀.3 P₀.7 layer17, and InAs₀.6 P₀.4 layer 19, respectively. The bandgaps of theabsorption layers 9, 11, 13 are 0.75, 0.60, and 0.47 eV, respectively,which correspond to cutoff wavelengths of 1.65, 2.07, 2.64 μm,respectively. To accommodate the lattice mismatch between the absorptionlayers 9, 11, and 13, step-graded 1 μm thick InAsP buffer layers 21, 23,25, 17, 27, 29, and 19 are grown. Thus, the respective latticeparameters of the In_(x) Ga_(1-x) As absorption layers matches thelattice parameter of the InAsP layers immediately underneath. Thelattice parameter of the InAsP layers immediately above the absorptionlayers should also match, but in this structure the lattice parameter ofInAs₀.4 P₀.6 layer 27 does not exactly match that of In₀.7 Ga₀.3 Asabsorption layer 11. This may be the source of somewhat elevated darkcurrents in the longer wavelength detectors. Accordingly, in a preferreddevice the lattice parameters of layers 27 and 1! should match. All thegrown layers were undoped (with a background n-type carrierconcentration of <5×10¹⁵ cm⁻³), while the (100) InP substrate 15 wasdoped with sulfur to give an n-type doping density of 8×10¹⁸ cm⁻³. Theband diagram in FIG. 1C shows the band gap and the band offsets betweenthe different layers 15, 9, 21, 23, 25, 17, 11, 27, 29, 19, 13, and 31;and FIG. 1B shows the composition, bandgap in electron volts (eV) andequivalent wavelength in micrometers (μm), and the thickness inmicrometers (μm), respectively.

A selective wet etching process was developed in order to access thedifferent absorption layers to enable junction diffusion for detectionregions 3, 5, and 7, respectively (see FIG. 1A). A mixture of 5:1 citricacid (50% by weight):H₂ O₂ was used to etch InGaAs detection layerssince it is strongly selective of InGaAs (versus InAsP), and leaves agood surface morphology. The etch rate of In_(x) Ga_(1-x) As is ˜1000Å/min at room temperature. To etch InAsP layers, a mixture of HCl:H₃ PO₄:H₂ O₂ in the ratio of 3:1:x was used, where x was varied from 0 to 0.3as the arsenic concentration in InAsP was increased. The etch rate ofInAsP is ˜200 Å/sec at room temperature. To fabricate the integrateddetector array 1, a area square area 33 of 500 μm² (see FIG. 4) wasfirst etched above the In₀.7 Ga₀.3 As layer 11 and In₀.85 Ga₀.15 Aslayer 13, using a plasma deposited SiN_(x) film (1000 Å) as an etchmask, for initially forming detection region 3. Similarly, a 500 μm²area 34 was etched above layer 11 for initially forming detector region5. Thin layers (1 μm thick) 21 and 27 of InAsP were left on top of theabsorption layers in regions 3 and 5 as a wider bandgap cap layer inorder to reduce surface-generated dark current. The pn junctions of allthree detectors in regions 3, 5, and 7, respectively, were formed in 100by 150 μm areas 35, 37, and 39, respectively, using a single sealedampoule diffusion of Zinc Arsenide, with SiN_(x) used as the diffusionmask. As a result, p+ diffusions were formed in regions 35, 37, and 39,thereby providing pn junctions with their underlying n doped absorptionlayers 9, 11, and 13, respectively. Next, an antireflection coating 41of SiN_(x) is deposited to a thickness of 2250 Å on the top diodesurface (see FIG. 1A). Also, 40 μm square Au--Zn alloy contacts 43, 45,and 47 are placed on top of the diffused areas 35, 37, 39, respectively,using a photoresist lift-off process. Also, overlay metal contacts 40,44, and 46, typically of TiAu material, are formed on top of theantireflective coating 41 in association with detectors 3, 5, and 7, forelectrically contacting contacts 43, 45, and 47, respectively. Contacts43, 45, and 47 facilitate making electrical connections either toindividual ones of, or two or more of detectors 3, 5, and 7,respectively, using integrated circuitry techniques, such as flip-chipbonding, or wire bonding.

In order to maximize performance, the back surface of the detector array1 or bottom of substrate 15 should preferably have an antireflectioncoating 42 of SiN_(x), and an ohmic contact grid 48 (typically GeNiAualloy), as shown in FIG. 1D. More specifically, in the preferredembodiment, the contact 48 is formed into a grid pattern with openspaces 42 for allowing backlighting or back illumination of thesubstrate 15 or detector 1. The open spaces 42 consist of a transparentantireflective coating of SiN_(x), in this example. Each space 42permits back illumination of an underlying absorption layer 9, 11, or13, associated with a given detector 3, 5, or 7, of a pixel in an arrayof such pixels, in this example.

The basic processing steps for the three wavelength infrared focal planearray detector element 1 of FIG. 1A are summarized in eight steps asfollows:

I. Deposit 1000 Å SiN_(x) film by Plasma Enhanced Chemical VaporDeposition (PECVD)

II. Photolithography to define etch area (500 μm square)

III. Material selective wet etching

InGaAs: Citric Acid:H₂ O₂ at 5:1

InAsP: HCl:H₃ PO₄ :H₂ O₂ at 3:1:x

IV. Deposit 1000 SiN_(x) diffusion mask

V. Photolithography to define diffusion area (100 by 150 μm area)

VI. Sealed ampoule diffusion using Zn₂ As₃ at 500°14 530° C. for 20-40minutes

VII. Deposit 2250 SiN_(x) anti-reflective coating on top surface

VIII. Place Au--Zn alloy contacts (40 μm square) on top of diffused areausing photoresist lift-off process

IX. Deposit SiNx AR coating on substrate surface

X. Deposit GeNiAu on substrate surface over previously exposed anddeveloped photoresist layer lift off metal to form grid pattern

Note that in step II, a chrome or iron oxide photolithography mask canbe used. In step III, in place of wet etching, reactive ion (dry)etching can be used. Also, in step IV, a silicon nitride mask is used.

Using capacitance versus voltage measurements, the inventors obtainedthe carrier concentration in the absorption layers 9, 11, and 13 foreach detector 3, 5, and 7, respectively. It was determined that thebackground carrier concentration in the absorption layers 11 and 13 is<1×10¹⁶ cm⁻³, but higher for the In₀.53 Ga₀.47 As layer 9 where thecarrier concentration increases near the heavily doped substrate 15, dueto the diffusion of the sulfur substrate dopant into the epitaxiallygrown layer. Also, at 0 V, the smaller bandgap materials have highercapacitance (2.1, 3.0, 7.8 pF for In₀.53 Ga₀.47 As, In₀.7 Ga₀.3 As, andIn₀.53 Ga₀.15 As layers 9, 11, and 13, respectively). In the operatingrange of 5-10 V, all diodes or pn junctions exhibit capacitances rangingfrom 1.2-2.0 pF, again with the short wavelength (In₀.53 Ga₀.47 As)detector 3 having the smallest capacitance.

The dark current of each detector 3, 5, and 7 under reverse bias isshown as points in FIG. 2, in plots 49, 51, and 53, for absorptionlayers 9, 11, and 13, respectively. The error bars were determined fromthe sum of measurement random error (determined to be five percent ofthe measured value) and small systematic errors. The lines aretheoretical fits assuming that the total dark current is the sum of thegeneration-recombination current (either in the bulk or at the surface),junction shunt current, and diffusion current at low voltages, whiletunneling dominates at high voltages, as has been shown to be the casein previous studies of InGaAs photodiodes.

The theory fits the measured data, especially for the In₀.53 Ga₀.47 Aslayer 9 for detector 3. The main source of low voltage dark current forthis detector is generation-recombination current which is (at V>kT)given by: ##EQU1## where k is the Boltzman constant, T is the absolutetemperature, q is the electronic charge, τ_(eff) is the effectivecarrier lifetime, n_(i) is the intrinsic carrier concentration, A is thesurface or cross-sectional area of the depletion region boundary, and Wis the depletion region width for an abrupt one-sided junction. From thefit, the value of τ_(eff) is estimated to be 1 μs, indicating that thegrowth and processing of the complex structure shown in FIG. 1 does notsignificantly affect the diode properties. The tunneling current, whichbecomes dominant at V>15 volts for this detector 3, in this example, isgiven by: ##EQU2## where m_(o) is the free electron mass, ε_(g) is theenergy band gap of the absorbing layer material, η is Planck's constantdivided by 2π, E_(m) is the maximum junction electric field given by:

    Em=-2(V+V.sub.b1)/W                                        (3)

and Θ depends on the shape of the tunneling barrier. Here, Θ wasestimated to be 0.26 from the fit. The prefactor γ depends on theinitial and final states of the tunneling carrier.

The dark currents of In₀.7 Ga₀.3 As and In₀.85 Ga₀.15 As detectors 5 and7, respectively, are considerably larger than for the In₀.53 Ga₀.47 Asdetector 3, especially at lower voltages. This is due, in part, to thesmaller bandgap of the former materials which not only leads to anincreased intrinsic carrier concentration affecting both the diffusionand the generation-recombination currents, but also leads to increasedtunneling current. Another source of the high dark current is the largerconcentration of defects in these materials caused by the latticemismatch between the absorption layers 11 and 13, and the InP substrate15. These defects provide midgap generation-recombination centers,increasing the generation-recombination current. Indeed, τ_(eff) for theIn₀.7 Ga₀.3 As layer 11 is estimated to be 110 ns, which is nearly anorder of magnitude less than for In₀.53 Ga₀.47 As layer 9.

The a.c. small signal conductance at 0 V was measured at 1 kHz to be18.2 nS, 4.54 μS, 9.34 μS which translates to shunt resistances of 55.1MΩ, 220 kΩ, and 107 ωk for In₀.53 Ga₀.47 As layer 9, In₀.7 Ga₀.3 Aslayer 11, and In₀.85 Ga₀.15 As layer 13 for detectors 3, 5, and 7,respectively. Assuming that the generation-recombination is the mainsource of conductance near 0 V, one can calculate τ_(eff) (using theseconductance values) for In₀.53 Ga₀.47 As and In₀.7 Ga₀.3 As layers 9,11, respectively, to be 1.1 μs and 61 ns, respectively, which is in goodagreement with values calculated from the dark current.

The contribution from shunt current, given by:

    I.sub.ohm =V/R.sub.eff                                     (4)

where R_(eff) is the effective resistance, was found to be much greaterfor In₀.7 Ga₀.3 As and In₀.85 Ga₀.15 As detectors, where R_(eff) wasapproximately 3-4 MΩ, while for In₀.53 Ga₀.47 As detector, R_(eff) >5ΩG. This may also be due to the larger number of defects in the In₀.7Ga₀.3 As and In₀.85 Ga₀.15 As layers, but the physical origin of theshunt conduction is not clear.

The diffusion current is negligible except for the In₀.85 Ga₀.15 Asdetector. The diffusion current is given by: ##EQU3## where D_(P) ishole diffusion constant, τ_(d) is the minority carrier diffusionlifetime, and N_(d) is the doping density. The diffusion current dependsexponentially on the bandgap which is smallest for the In₀.85 Ga₀.15 Aslayer 13, where τ_(d) was estimated to be 500 ps.

Note that the tunneling current contribution to the dark current was notobserved for the In₀.7 Ga₀.3 As and In₀.53 Ga₀.15 As detectors 5 and 7due to the large component of generation, diffusion, and shunt currents.It is believed that the integration and processing of the three-detectorpixel in the above example for detector array 1 does not significantlydegrade individual device performance.

The quantum efficiency of each detector 3, 5, and 7 under front (lightincident from the associated pn junction) and back illumination is shownin plots 55, 57, and 59, respectively, of FIG. 3. The measurements weremade under a reverse bias of 3.5, 6.0, 5.0 volts for In₀.53 Ga₀.47 As,In₀.85 Ga₀.3 As, and In₀.85 Ga₀.15 As detectors 3, 5, and 7,respectively. The measured long wavelength cutoffs of 1.7, 2.1, and 2.5μm correspond to the bandgaps of the absorption layer materials. Theshort wavelength cutoff for the device 1 under back illumination isdetermined by the light absorption properties of layers between thesubstrate 15 and the absorption layers 9, 11, and 13. For example, forthe In₀.7 Ga₀.3 As layer forming detector 5, light absorbed in theunderlying In₀.53 Ga₀.47 As layer 9 will not be detected, thus the shortwavelength cutoff of the In₀.7 Ga₀.3 As detector 5 is approximatelyequal to the cutoff wavelength of In₀.5 Ga₀.47 As layer 9. The peakquantum efficiency under front illumination ranges from 55 to 95%. Forthe In₀.85 Ga₀.15 As detector 7, the peak quantum efficiency wasdetermined to be 55%. This lower than expected efficiency is believeddue, in part, to the large number of heterojunctions and layersunderlying the detectors, increasing the probability of the carrierbeing captured and recombining at traps prior to being collected. Also,the fact that the diffusion of Zn is faster in In₀.85 Ga₀.15 As layer 13compared with the other absorption layers 9 and 11, caused the thicknessof the depleted absorption region to be less than optimum (<2 μm) inthis detector 1, affecting its quantum efficiency. The peak quantumefficiency under back illumination (between 15% and 60%) is somewhatlower than for front illumination since the antireflective coating wasdeposited only on the top surface of device 1, in this particularexample.

In summary of one embodiment of the invention, as described above, anovel three wavelength InGaAs focal plane array pixel element 1 fordetection at wavelengths from 0.9-2.6 μm is shown, where each of threewavelength-sensitive detectors 3, 5, and 7 are individually addressable.This device 1 consists of successively smaller bandgap layers of In_(x)Ga_(1-x) (x≧0.53) 9, 11, and 13, grown on an InP substrate 15, separatedby layers of InAs_(y) P_(1-y) to decrease defects induced by latticemismatch strain with the substrate 15. The various layers wereselectively removed so that pn junctions with different wavelengthresponse can be separately contacted. All three detectors 3, 5, and 7have quantum efficiencies between 15 and 95% (depending on wavelengthand illumination direction) and dark currents from 0.01 to 10 mA cm²--values comparable to discrete photodiodes with similar wavelengthresponses.

To improve the performance of the three wavelength infrared focal planearray detector 1 of FIGS. 1A, and 1B, the present inventors believe thatthe modified device as shown in FIG. 5A is preferred. As shown, relativeto the prototype detector element 1 of FIG. 1B, the preferred embodimentthereof of FIG. 5A includes an additional transparent strain relieflayer 18 between absorption layer 11 and strain relief layer 27, asshown. Improved performance is expected to be obtained in that thelattice parameter of the InAs₀.3 P₀.7 layers 17 and 18, immediatelybelow and above the absorption layer 11, are matched. In this manner,the magnitude of the dark current associated with absorption layer 11 isexpected to be reduced, as previously indicated above. Also, theimproved performance can be observed by comparing the band diagram shownin FIG. 1C for the prototype device 1, relative to the band diagram ofFIG. 5B for the preferred configuration of FIG. 5A, whereby as shown thebandgap is extended for strain relief layers 19, 29 and 27, by theaddition of strain relief layer 18.

The present invention, within practical limits, can be extended toprovide a focal plane array detector element capable of detecting "N"different wavelengths, where N is any integer number 1, 2, 3, 4, 5, . .. , N. As shown in FIG. 6, such a device includes a cap layer Z,analogous to layer 31 of FIG. 5A, a substrate A, a first absorptionlayer B, over a strain relief layers C (analogous to layers 17, 25, 23,and 21 of the device of FIG. 5A), a second absorption layer D, followedby alternating buffer absorption layers to the Nth order or degree,followed by an Nth absorption layer, followed by the previouslymentioned cap layer Z. The material for each of these layers isgenerally indicated in the legend in FIG. 6, as is the doping for eachof these layers. Also, a band diagram is included showing the bandgapsof the various layers associated with the N absorption layer device ofFIG. 6.

Although various embodiments of the invention are described herein forpurposes of illustration, they are not meant to be limiting. Those ofskill in the art may recognize modifications that can be made in theillustrated embodiments. Such modifications are meant to be covered bythe spirit and scope of the appended claims. For example, a plurality ofpixels each providing the capability of detecting up to (N+1) differentwavelengths of light can be provided on a common substrate, with eachpixel including (N+1) detectors, thereby providing an array of suchpixels through use of the present invention.

What is claimed is:
 1. A method for making a multiwavelength focal planearray light detector, comprising the steps of:doping a substrate to havea first conductivity, said substrate having a top and a bottom;epitaxially growing a plurality of (N+1) absorption layers over the topof said substrate, with each absorption layer being configured fordetecting different wavelengths of light, respectively, where N=1,2,3 .. . ; upon individually completing the epitaxial growth of each one ofsaid absorption layers, epitaxially growing thereover a plurality oflayers of light transparent buffer layers of said first conductivity,for sandwiching all but the topmost and bottommost ones of saidabsorption layers between a plurality of said buffer layers, said bufferlayers having substantially increasing lattice parameters, respectively,relative to said substrate, for substantially preventing propagation oflattice mismatch dislocations through successive ones of said absorptionlayers; epitaxially growing a cap layer over a top face of the topmostone of said absorption layers; wet etching through a first portion ofsaid cap layer for exposing an area of the topmost one of saidabsorption layers; etching via wet or reactive ion (dry) etching through(N+1) different portions of said cap layer, and said plurality of bufferlayers overlying remaining ones of said plurality of (N+1) absorptionlayers, respectively, for exposing an area of each; diffusing dopantinto the exposed areas of said plurality of (N+1) absorption layers, fordoping each area to have a second conductivity opposite that of saidfirst conductivity; forming a plurality first ohmic contacts on aportion of each one of the exposed areas of said plurality of (N+1)absorption layers, respectively; and forming a second ohmic contact onthe bottom of said substrate.
 2. The method of claim 1, furtherincluding the steps of:depositing an antireflective coating over the topof said substrate to cover all but said first ohmic contacts; anddepositing an antireflective coating on the bottom of said substrate tocover all but said second ohmic contact.
 3. The method of claim 1,further including the step of forming said second ohmic contact into agrid for exposing a sufficient area of the bottom of said substrate topermit back illumination thereof.
 4. The method of claim 1, wherein saidstep of epitaxially growing a plurality of (N+1) absorption layersincludes the step of:selecting In_(x) Ga_(1-x) As (X≧0.53) material foreach one of said absorption layers, in a manner providing successivelydecreasing bandgaps, respectively, relative to said substrate.
 5. Themethod of claim 4, wherein said steps of epitaxially growing a pluralityof buffer layers between each one of said absorption layers, includesthe step of:selecting InAs_(y) P_(1-y) (y≦1) material for each one ofsaid buffer layers, in a manner providing increasing lattice parametersfor said plurality of buffer layers the further removed one is from saidsubstrate, respectively.
 6. The method of claim 5, wherein said step ofselecting InAs_(y) P_(1-y) material includes for each buffer layerimmediately above and below a given one of said plurality absorptionlayers, making the material composition thereof substantially identicalfor equating the lattice parameters thereof, respectively.
 7. The methodof claim 5, wherein said wet etching step includes the steps of:using anetching solution of Citric Acid: H₂ O₂ at 5:1 for etching the In_(x)Ga_(1-x) As material of said absorption layers; and using an etchingsolution of HCl:H₃ PO₄ :H₂ O₂ at 3:1:z, where z is varied from 0 to 3relative to an arsenic concentration in said buffer layers.
 8. Themethod of claim 7, further including immediately before said wet etchingstep, the step of depositing a SiN_(x) film on the top of saidsubstrate.
 9. The method of claim 8, further including as the initialstep of said wet etching step, the step of defining an etch area viaphotolithography at each location on the top of said substrate whereetching is to be performed for exposing an area of an underlying saidabsorption layer.
 10. The method of claim 5, wherein said diffusing stepincludes the steps of:depositing a SiN_(x) diffusion mask on top of saidsubstrate; defining a diffusion area for each exposed absorption layerarea; and diffusing Zinc Arsenide into each one of said exposedabsorption layer areas.
 11. The method of claim 10, further includingthe steps of:depositing a SiN_(x) antireflective coating on the top ofsaid substrate; and depositing a SiN_(x) antireflective coating on thebottom of said substrate.
 12. The method of claim 11, wherein said stepof forming said first ohmic contact includes the step of:selectingAu--Zn alloy material for said first ohmic contacts; and placing saidAu--Zn alloy first ohmic contacts on each one of said diffused areas ofsaid absorption layers, respectively, via a photoresist lift-offprocess.
 13. The method of claim 12, wherein said step of forming saidsecond ohmic contact includes the steps of:selecting GeNiAu alloymaterial for said second ohmic contact; and placing said second ohmiccontact on the bottom of said substrate via a photoresist lift-offprocess.
 14. The method of claim 8, wherein the thickness of the saidSiN_(x) film is 1000 Å.
 15. The method of claim 9, wherein said etchareas are each 500 micrometers square.
 16. The method of claim 10,wherein said SiN_(x) diffusion mask is 1000 Å.
 17. The method of claim10, wherein said diffusing step is run for 20-40 minutes at 500°-530° C.18. The method of claim 11, wherein said SiN_(x) antireflective coatingis 2250 Å thick for both the top and bottom of said substrate.
 19. Themethod of claim 12, wherein said first ohmic contacts are 40 micrometerssquare.
 20. The method of claim 13, wherein said second ohmic contact isformed into a grid pattern with sufficient open areas to permit backillumination of said substrate.
 21. The method of claim 1, wherein saidsteps of wet etching, diffusing, and forming a plurality of first ohmiccontacts on a portion of the exposed areas of said (N+1) absorptionareas, are used for providing on said substrate a plurality of columnsof pixels each including (N+1) light wave detectors of differentwavelengths, respectively, said pixels being arranged to provide anarray.